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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

Mark Eliot Masters

USPTO Granted Patents = 17


Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 195(Granted Patents)


Company Filing History:

goldMedal17 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2001-2013

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):
1. 8536526 - Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit (2013-09-17),
2. 8039334 - Shared gate for conventional planar device and horizontal CNT (2011-10-18),
3. 7838943 - Shared gate for conventional planar device and horizontal CNT (2010-11-23),
4. 7674674 - Method of forming a dual gated FinFET gain cell (2010-03-09),
5. 7566613 - Method of forming a dual gated FinFET gain cell (2009-07-28),
6. 7535016 - Vertical carbon nanotube transistor integration (2009-05-19),
7. 7503021 - Integrated circuit diagnosing method, system, and program product (2009-03-10),
8. 7484423 - Integrated carbon nanotube sensors (2009-02-03),
9. 7473633 - Method for making integrated circuit chip having carbon nanotube composite interconnection vias (2009-01-06),
10. 7247877 - Integrated carbon nanotube sensors (2007-07-24),
11. 7135773 - Integrated circuit chip utilizing carbon nanotube composite interconnection vias (2006-11-14),
12. 7109546 - Horizontal memory gain cells (2006-09-19),
13. 7089138 - Canary device for failure analysis (2006-08-08),
14. 6970372 - Dual gated finfet gain cell (2005-11-29),
15. 6627926 - Method of designing and structure for visual and electrical test of semiconductor devices (2003-09-30),

Title: Innovations of Mark Eliot Masters

Introduction

Mark Eliot Masters is a prominent inventor based in Essex Junction, Vermont. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on advanced methods for probing integrated circuits and innovative semiconductor structures.

Latest Patents

Among his latest patents are "Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit" and "Shared gate for conventional planar device and horizontal CNT." The first patent describes a method that involves scanning a primary charged particle beam across a device structure while collecting secondary electrons to form a detailed image. The second patent presents a hybrid semiconductor structure that integrates a planar semiconductor device with a horizontal carbon nanotube transistor, allowing for enhanced functionality.

Career Highlights

Mark Eliot Masters is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of semiconductor technology. His extensive experience and expertise have positioned him as a key figure in the development of advanced electronic devices.

Collaborations

Throughout his career, Masters has collaborated with notable colleagues, including Mark Charles Hakey and Toshiharu Furukawa. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Mark Eliot Masters exemplifies the spirit of innovation in the semiconductor industry. His contributions through patents and collaborations have significantly impacted the field, showcasing his dedication to advancing technology.

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