The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jun. 23, 2008
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Mark Eliot Masters, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
Mark Eliot Masters, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory gain cell for a memory circuit, a memory circuit formed from multiple memory gain cells, and methods of fabricating such memory gain cells and memory circuits. The memory gain cell includes a storage device capable of holding a stored electrical charge, a write device, and a read device. The read device includes a fin of semiconducting material, electrically-isolated first and second gate electrodes flanking the fin, and a source and drain formed in the fin adjacent to the first and the second gate electrodes. The first gate electrode is electrically coupled with the storage device. The first and second gate electrodes are operative for gating a region of the fin defined between the source and the drain to thereby regulate a current flowing from the source to the drain. When gated, the magnitude of the current is dependent upon the electrical charge stored by the storage device.