The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Jan. 31, 2005
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, Iii, Delmar, NY (US);
Mark E. Masters, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, III, Delmar, NY (US);
Mark E. Masters, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal semiconductor device have at least one shared node is provided. The at least one shared node can include, for example, a drain, source or gate electrode of a FET, or an emitter, collector, or base of a bipolar transistor.