The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Jun. 29, 2004
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Mark Eliot Masters, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
Mark Eliot Masters, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A gain cell for a memory circuit, a memory circuit formed from multiple gain cells, and methods of fabricating such gain cells and memory circuits. The memory gain cell includes a storage capacitor, a write device electrically coupled with the storage capacitor for charging and discharging the storage capacitor to define a stored electrical charge, and a read device. The read device includes one or more semiconducting carbon nanotubes each electrically coupled between a source and drain. A portion of each semiconducting carbon nanotube is gated by the read gate and the storage capacitor to thereby regulate a current flowing through each semiconducting carbon nanotube from the source to the drain. The current is proportional to the electrical charge stored by the storage capacitor. In certain embodiments, the memory gain cell may include multiple storage capacitors.