The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Aug. 20, 2004
Mark C. Hakey, Fairfax, VT (US);
Mark E. Masters, Essex Junction, VT (US);
Leah M. P. Pastel, Essex Junction, VT (US);
David P. Vallett, Fairfax, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Mark E. Masters, Essex Junction, VT (US);
Leah M. P. Pastel, Essex Junction, VT (US);
David P. Vallett, Fairfax, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the first transistor, wherein the signals comprise any of temperature, voltage, current, electric field, and magnetic field signals. Moreover, the CNT FET is adapted to measure stress and strain in the integrated circuit, wherein the stress and strain comprise any of mechanical and thermal stress and strain. Additionally, the CNT FET is adapted to detect defective circuits within the integrated circuit.