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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Mahadeva Iyer Natarajan

This inventor holds 34 USPTO granted patents and 3 published patent applications, primarily in Electrostatic Discharge Protection. Top assignees: Globalfoundries Inc., Globalfoundries Singapore Pte. Ltd., Globalfoundries U.S. Inc.. Active years: 2014-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mahadeva Iyer Natarajan. Retrieved from https://idiyas.com/inventor/mahadeva-iyer-natarajan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 73.5

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 50(Granted Patents)


Location History:

  • Singapore, SG (2017)
  • Clifton Park, NY (US) (2014 - 2021)

Company Filing History:

goldMedal22 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal11 out of 1,062 
 
Globalfoundries Singapore Pte. Ltd.
 patents
bronzeMedal1 out of 1,092 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2014-2021

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Areas of Expertise:
FinFET
MOSFET
Electrostatic Discharge
Schottky Diode
Transistor Structures
Integrated Circuits
Static Charge Dissipation
Trigger-Voltage Tunable
Three-Dimensional Devices
Latch-Up Detection
Power Clamp
I/O Driver Circuits
34 patents (USPTO):Explore Patents
1. 10964687 - FinFET ESD device with Schottky diode (2021-03-30),
2. 10833012 - Transistor structures having electrically floating metal layers between active metal lines (2020-11-10),
3. 10790276 - Methods, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection (2020-09-29),
4. 10741542 - Transistors patterned with electrostatic discharge protection and methods of fabrication (2020-08-11),
5. 10510663 - Transistor structures having electrically floating metal layer between active metal lines (2019-12-17),
6. 10403622 - Electrostatic discharge protection device and methods (2019-09-03),
7. 10373946 - Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control (2019-08-06),
8. 10211168 - Dissipation of static charge from wiring layers during manufacturing (2019-02-19),
9. 10147715 - Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors (2018-12-04),
10. 10115718 - Method, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection (2018-10-30),
11. 10083952 - Diode-triggered schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control (2018-09-25),
12. 10068895 - Transistors patterned with electrostatic discharge protection and methods of fabrication (2018-09-04),
13. 9831236 - Electrostatic discharge (ESD) protection transistor devices and integrated circuits with electrostatic discharge protection transistor devices (2017-11-28),
14. 9741849 - Integrated circuits resistant to electrostatic discharge and methods for producing the same (2017-08-22),
15. 9679888 - ESD device for a semiconductor structure (2017-06-13),

Title: Mahadeva Iyer Natarajan - Pioneering Inventor from Clifton Park

Introduction:

Mahadeva Iyer Natarajan is a distinguished inventor based in Clifton Park, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Natarajan holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his versatility and forward-thinking approach to invention.

Career Highlights:

With over two decades of experience in the tech industry, Natarajan has worked for leading companies, driving research and development initiatives that have led to significant technological advancements.

Collaborations:

Throughout his career, Natarajan has collaborated with top research institutions and universities, fostering a culture of innovation and knowledge-sharing to push the boundaries of technological progress.

Conclusion:

Mahadeva Iyer Natarajan's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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