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Clifton Park, NY, United States of America

Mahadeva Iyer Natarajan

USPTO Granted Patents = 34 (Patent Applications = 3)

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 49(Granted Patents)

Location History:

Singapore, SG (2017)
Clifton Park, NY (US) (2014 - 2021)

Company Filing History:

22 out of 5,671

Globalfoundries Inc.

11 out of 1,016

Globalfoundries Singapore Pte. Ltd.

Globalfoundries U.S. Inc.

Years Active: 2014-2021

where 'Filed Patents' based on already Granted Patents

34 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10964687 - FinFET ESD device with Schottky diode (2021-03-30),

2. 10833012 - Transistor structures having electrically floating metal layers between active metal lines (2020-11-10),

3. 10790276 - Methods, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection (2020-09-29),

4. 10741542 - Transistors patterned with electrostatic discharge protection and methods of fabrication (2020-08-11),

5. 10510663 - Transistor structures having electrically floating metal layer between active metal lines (2019-12-17),

6. 10403622 - Electrostatic discharge protection device and methods (2019-09-03),

7. 10373946 - Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control (2019-08-06),

8. 10211168 - Dissipation of static charge from wiring layers during manufacturing (2019-02-19),

9. 10147715 - Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors (2018-12-04),

10. 10115718 - Method, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection (2018-10-30),

11. 10083952 - Diode-triggered schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control (2018-09-25),

12. 10068895 - Transistors patterned with electrostatic discharge protection and methods of fabrication (2018-09-04),

13. 9831236 - Electrostatic discharge (ESD) protection transistor devices and integrated circuits with electrostatic discharge protection transistor devices (2017-11-28),

14. 9741849 - Integrated circuits resistant to electrostatic discharge and methods for producing the same (2017-08-22),

15. 9679888 - ESD device for a semiconductor structure (2017-06-13),

Title: Mahadeva Iyer Natarajan - Pioneering Inventor from Clifton Park

Introduction:

Mahadeva Iyer Natarajan is a distinguished inventor based in Clifton Park, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Natarajan holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his versatility and forward-thinking approach to invention.

Career Highlights:

With over two decades of experience in the tech industry, Natarajan has worked for leading companies, driving research and development initiatives that have led to significant technological advancements.

Collaborations:

Throughout his career, Natarajan has collaborated with top research institutions and universities, fostering a culture of innovation and knowledge-sharing to push the boundaries of technological progress.

Conclusion:

Mahadeva Iyer Natarajan's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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