The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Aug. 30, 2016
Globalfoundries Inc., Grand Cayman, KY;
Chien-Hsin Lee, Malta, NY (US);
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Manjunatha Prabhu, Malta, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
An electrostatic discharge (ESD) device for an integrated circuit includes a substrate having a longitudinally extending fin dispose thereon. A first n-type FinFET (NFET) is disposed within the fin. The NFET includes an n-type source, an n-type drain and a p-well disposed within the substrate under the source and drain. A p-type FinFET (PFET) is disposed within the fin. The PFET includes a p-type source/drain region and an n-well disposed within the substrate under the source/drain region. The n-well and p-well are located proximate enough to each other to form an np junction therebetween. The p-type source/drain region of the PFET and the n-type drain of the NFET are electrically connected to a common input node.