The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Feb. 02, 2017
Globalfoundries Inc., Grand Cayman, KY;
Chien-Hsin Lee, Malta, NY (US);
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Manjunatha Prabhu, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Various embodiments include fin-type field effect transistor (FinFET) structures. In some cases, a FinFET structure includes: a substrate; a silicon-controlled rectifier (SCR) over the substrate, the SCR including: a p-well region and an adjacent n-well region over the substrate; and a negatively charged fin over the p-well region; and a Schottky diode electrically coupled with the SCR, the Schottky diode spanning between the p-well region and the n-well region, the Schottky diode for controlling electrostatic discharge (ESD) across the negatively charged fin and the n-well region.