The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Feb. 08, 2017
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Chien-Hsin Lee, Malta, NY (US);
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Manjunatha Prahbu, Clifton Park, NY (US);
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Abstract
A fin field effect transistor (FinFET) ESD device is disclosed. The device may include: a substrate; a silicon-controlled rectifier (SCR) over the substrate, the SCR including: a p-well region over the substrate; an n-well region laterally abutting the p-well region over the substrate; a first P+ doped region over the p-well region; a first N+ doped region over the p-well region; and a second N+ doped region over the p-well region; and a Schottky diode electrically coupled to the n-well region, wherein the Schottky diode spans the n-well region and the p-well region, and wherein the Schottky diode controls electrostatic discharge (ESD) between the second N+ doped region and the n-well region.