Manjunatha Prahbu

Title: Manjunatha Prahbu: Innovator in FinFET Technology

Introduction

Manjunatha Prahbu is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of electrostatic discharge (ESD) devices.

Latest Patents

One of his key patents is the "FinFET ESD device with Schottky diode." This innovative device includes a substrate and a silicon-controlled rectifier (SCR) that features a p-well region and an n-well region. The design incorporates a first P+ doped region and two N+ doped regions over the p-well region. Additionally, a Schottky diode is electrically coupled to the n-well region, controlling ESD between the second N+ doped region and the n-well region. This patent highlights his expertise in advanced semiconductor devices and their applications.

Career Highlights

Manjunatha Prahbu is currently employed at GlobalFoundries U.S. Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the reliability and performance of electronic devices.

Collaborations

He has collaborated with esteemed colleagues such as Chien-Hsin Lee and Mahadeva Iyer Natarajan, contributing to various projects that advance the field of semiconductor engineering.

Conclusion

Manjunatha Prahbu's innovative work in FinFET technology and his contributions to ESD devices underscore his importance in the semiconductor industry. His patents and collaborations reflect a commitment to advancing technology and improving electronic device performance.