The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Apr. 08, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Chien-Hsin Lee, Singapore, SG;

Mahadeva Iyer Natarajan, Singapore, SG;

Xiangxiang Lu, Singapore, SG;

Tsung-Che Tsai, Singapore, SG;

Manjunatha Prabhu, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 27/0251 (2013.01); H01L 29/66659 (2013.01);
Abstract

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a heavily doped source area having conductivity determining impurities at a heavily doped source concentration and a lightly doped drain area having conductivity determining impurities at a lightly doped drain concentration less than the heavily doped source concentration. A drain conductor directly contacts the lightly doped drain area, and a channel is positioned between the heavily doped source area and the lightly doped drain area. A gate overlies the channel.


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