Beijing, China

Linfeng Lan

This inventor holds 10 USPTO granted patents and 3 published patent applications and 9 EPO patents. Top assignees: The South China University of Technology, Boe Technology Group Co., Ltd., Boe Technology Groupco., Ltd.. Active years: 2017-2024.

USPTO Granted Patents = 10 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Beijing, CN (2017 - 2020)
  • Guangdong, CN (2019 - 2024)

Company Filing History:


Years Active: 2017-2024

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10 patents (USPTO):Explore Patents

Title: Linfeng Lan: Innovator in Semiconductor Technology

Introduction

Linfeng Lan is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative work focuses on advanced materials and devices that have the potential to revolutionize various applications.

Latest Patents

One of Linfeng Lan's latest patents is a stretchable strain sensor based on vertical graphene. This sensor boasts a stretch ratio of more than 50% and is capable of recognizing timbre with frequencies greater than f hertz, where f can be 100, 800, or 2500. It features a sensitivity factor greater than 100 at 50% stretch. The vertical graphene in the sensor comprises a bottom plane layer and a vertical layer, containing high-density reticular cracks that can be oriented in transverse, vertical, and oblique directions. These cracks divide the vertical graphene into small blocks, which remain electrically connected even when stretched. The average diameter of each small block ranges between 5 and 20 microns.

Another notable patent involves a method for manufacturing a semiconductor thin film. This method includes the sequential formation of a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The layers can be either n-type or p-type semiconductors, with the n-type layer potentially including indium oxide. The intermediate layer may consist of a self-assembly material, while the p-type layer can include pentacene. This innovation also encompasses a semiconductor thin film transistor and a display apparatus.

Career Highlights

Linfeng Lan has worked with esteemed organizations such as the South China University of Technology and BOE Technology Group Co., Ltd. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Linfeng has collaborated with notable colleagues, including Junbiao Peng and Liangchen Yan. Their joint efforts have contributed to advancements in the field and have fostered a collaborative environment for innovation.

Conclusion

Linfeng Lan is a distinguished inventor whose work in semiconductor technology has led to significant advancements and numerous patents. His innovative contributions continue to shape the future of technology and materials science.

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