The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Dec. 10, 2015
Applicants:

Boe Technology Group Co., Ltd, Beijing, CN;

South China University of Technology, Guangzhou, CN;

Inventors:

Guangcai Yuan, Beijing, CN;

Liangchen Yan, Beijing, CN;

Xiaoguang Xu, Beijing, CN;

Lei Wang, Beijing, CN;

Junbiao Peng, Beijing, CN;

Linfeng Lan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 29/045 (2013.01); H01L 29/7869 (2013.01);
Abstract

A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.


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