The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jan. 13, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

South China University of Technology, Guangzhou, Guangdong, CN;

Inventors:

Guangcai Yuan, Beijing, CN;

Liangchen Yan, Beijing, CN;

Xiaoguang Xu, Beijing, CN;

Lei Wang, Beijing, CN;

Junbiao Peng, Beijing, CN;

Linfeng Lan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1335 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); G02F 1/133603 (2013.01); H01L 27/12 (2013.01); H01L 27/1222 (2013.01); H01L 27/156 (2013.01); H01L 29/786 (2013.01); H01L 33/005 (2013.01);
Abstract

A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (), a gate insulating layer (), an active layer () and source and drain electrodes () of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.


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