The South China University of Technology

Boe Technology Group Co., Ltd.

Boe Technology Groupco., Ltd.

Linfeng Lan

Junbiao Peng

Lei Wang

Xiaoguang Xu

Guangcai Yuan

Liangchen Yan

Caihao Deng

A stretchable strain sensor based on vertical graphene having a stretch ratio of more than 50% and is capable of recognizing timbre with frequency greater than f hertz, f being 100, 800 or 2500, and having a sensitivity factor greater than 100 at 50% stretch, wherein the vertical graphene comprises a bottom plane layer and a vertical layer and contains high-density reticular cracks, wherein the directions of the cracks can be transverse, vertical and oblique directions, wherein the reticular cracks divide the vertical graphene into a plurality of small blocks, and adjacent small blocks are electrically connected through the vertical layer in stretched state, the cracks widen, but still can be bridged by the vertical layer, the two sides of the cracks still remain electrically connected, the sensor remains effective, wherein average diameter range of the plane of each small block is between 5 and 20 microns.

Stretchable strain sensor based on vertical graphene and its application

A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

Semiconductor thin-film and manufacturing method thereof, thin-film transistor, and display apparatus

A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

Thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, display panel and display device

A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

Thin-film transistor (TFT) and manufacturing method thereof

The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

Method of fabricating electrodes, method of fabricating thin film transistor, method of fabricating array substrate, thin film transistor, array substrate, and display apparatus

A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (), a gate insulating layer (), an active layer () and source and drain electrodes () of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.

Thin film transistor, array substrate and manufacturing method thereof, and display device

In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

Thin-film-transistor, thin-film-transistor array substrate, fabricating methods thereof, and display panel

This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

Oxide semiconductor thin film, thin film transistor, manufacturing method and device

The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.

Thin film transistor, array substrate, their manufacturing methods, and display device

A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

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Beijing, China

Linfeng Lan