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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10497563 B1

PDFFull Text
Date of Patent:
Dec. 03, 2019

Filed:

Apr. 25, 2017

Thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, display panel and display device

Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

South China University of Technology, Guangzhou, Guangdong, CN;

Inventors:

Liangchen Yan, Beijing, CN;

Guangcai Yuan, Beijing, CN;

Xiaoguang Xu, Beijing, CN;

Lei Wang, Beijing, CN;

Junbiao Peng, Guangdong, CN;

Linfeng Lan, Guangdong, CN;

Assignees:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, Guangdong, CN;

Attorney:

Kinney & Lange, P.A.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 21/84 (2006.01); H01L 29/24 (2006.01); H01L 21/443 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02422 (2013.01); H01L 21/02628 (2013.01); H01L 21/02664 (2013.01); H01L 21/443 (2013.01); H01L 21/84 (2013.01); H01L 27/12 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01);
Abstract

A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

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