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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10439070 B1

PDFFull Text
Date of Patent:
Oct. 08, 2019

Filed:

May. 11, 2016

Thin-film transistor (tft) and manufacturing method thereof

Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

South China University of Technology, Guangzhou, Guangdong, CN;

Inventors:

Liangchen Yan, Beijing, CN;

Guangcai Yuan, Beijing, CN;

Xiaoguang Xu, Beijing, CN;

Lei Wang, Beijing, CN;

Junbiao Peng, Beijing, CN;

Linfeng Lan, Beijing, CN;

Assignees:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, Guangdong, CN;

Attorney:
Primary Examiner:

Bac H Au

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/51 (2006.01); C23C 14/18 (2006.01); C23C 14/20 (2006.01); C23C 14/58 (2006.01); C25D 11/02 (2006.01); C25D 11/04 (2006.01); C25D 11/26 (2006.01); C25D 11/34 (2006.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); C23C 14/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C23C 14/165 (2013.01); C23C 14/185 (2013.01); C23C 14/205 (2013.01); C23C 14/5853 (2013.01); C25D 11/022 (2013.01); C25D 11/04 (2013.01); C25D 11/26 (2013.01); C25D 11/34 (2013.01); H01L 21/0223 (2013.01); H01L 21/02422 (2013.01); H01L 21/02565 (2013.01); H01L 21/02614 (2013.01); H01L 21/443 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/78603 (2013.01); H01L 29/78606 (2013.01); H01L 29/78693 (2013.01); H01L 21/02244 (2013.01); H01L 21/02258 (2013.01);
Abstract

A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

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