Hopkinton, MA, United States of America

Lawrence E Felton

USPTO Granted Patents = 17 


Average Co-Inventor Count = 3.2

ph-index = 8

Forward Citations = 302(Granted Patents)


Company Filing History:


Years Active: 2002-2013

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17 patents (USPTO):Explore Patents

Title: Innovations of Lawrence E Felton

Introduction

Lawrence E Felton is a notable inventor based in Hopkinton, MA (US). He has made significant contributions to the field of microelectromechanical systems (MEMS) and holds a total of 17 patents. His work has advanced the technology used in various sensor applications.

Latest Patents

One of his latest patents is a method of producing a MEMS device. This method involves removing the bottom side of a device wafer after its movable structure is formed. The process begins with providing the device wafer, which has an initial bottom side. Next, the movable structure is formed on the device wafer, followed by the removal of substantially the entire initial bottom side. This removal effectively creates a final bottom side for the device. Another significant patent is for a capped sensor. In this invention, a sensor element is capped by bonding or forming a cap on the sensor element. The sensor may be hermetically sealed using a hermetic cap and bonding material or by applying a hermetic coating. Additionally, the sensor may be filled with a gas at an elevated pressure or a special gas with a density-to-viscosity ratio above approximately 0.2.

Career Highlights

Throughout his career, Lawrence E Felton has worked with various companies, including Analog Devices, Inc. His expertise in MEMS technology has positioned him as a key player in the industry.

Collaborations

Lawrence has collaborated with notable individuals such as John R Martin and Maurice S Karpman. Their combined efforts have contributed to advancements in sensor technology and MEMS devices.

Conclusion

Lawrence E Felton's innovative work in MEMS technology and his numerous patents highlight his significant impact on the field. His contributions continue to influence the development of advanced sensor applications.

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