The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Aug. 09, 2004
Applicants:
John R. Martin, Foxborough, MA (US);
Lawrence E. Felton, Hopkinton, MA (US);
Inventors:
John R. Martin, Foxborough, MA (US);
Lawrence E. Felton, Hopkinton, MA (US);
Assignee:
Analog Devices, Inc., Norwood, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing a MEMS device forms structure on a non-standard device wafer. To that end, the method provides the noted non-standard device wafer, which has a wafer outer diameter and a non-standard thickness. As known by those in the art, a standard device wafer has a standard thickness when its outer diameter equals the wafer outer diameter. In illustrative embodiments, however, the non-standard thickness is smaller than the standard thickness. The method then forms structure on the non-standard device wafer.