The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Sep. 27, 2002
Chang-han Yun, Boston, MA (US);
Lawrence E. Felton, Hopkinton, MA (US);
Maurice S. Karpman, Brookline, MA (US);
John A. Yasaitis, Lexington, MA (US);
Michael W. Judy, Wakefield, MA (US);
Colin Gormley, Belfast, GB;
Chang-Han Yun, Boston, MA (US);
Lawrence E. Felton, Hopkinton, MA (US);
Maurice S. Karpman, Brookline, MA (US);
John A. Yasaitis, Lexington, MA (US);
Michael W. Judy, Wakefield, MA (US);
Colin Gormley, Belfast, GB;
Analog Devices, Inc., Norwood, MA (US);
Abstract
An intermediate electrode layer is used to fabricate an integrated micro-electromechanical system. An intermediate electrode layer is formed on an integrated circuit wafer. The intermediate electrode layer places drive electrodes a predetermined height above the surface of the integrated circuit wafer. A micro-electromechanical system wafer having micromachined optical mirrors is bonded to the integrated circuit wafer such that the drive electrodes are positioned a predetermined distance from the optical mirrors.