Larry Burton Rowland

Title: Larry Burton Rowland: Prolific Innovator in Semiconductor Devices

Introduction:

In the realm of semiconductor devices and cutting-edge technologies, Larry Burton Rowland, hailing from Scotia, NY, has made significant contributions. With an impressive portfolio of 17 patents and a remarkable career working with renowned companies like Momentive Performance Materials GmbH and General Electric Corporation GmbH, Rowland's expertise has propelled advancements in the field of high voltage semiconductor devices.

Latest Patents:

Rowland's latest patents showcase his ingenuity in the development of high voltage semiconductor devices and methods of manufacturing them. One notable invention includes Metal-oxide-semiconductor field-effect transistor (MOSFET) devices. These devices feature a unique p-type region situated between the p-type well regions, which can either float or be connected to the p-type well regions using additional p-type regions. Furthermore, Rowland has also contributed to the advancement of geometric arrangements in MOSFET devices, including square, diamond, and hexagonal configurations. His patents also detail essential methods for fabricating these innovative devices.

Career Highlights:

Throughout his illustrious career, Rowland has consistently demonstrated his expertise in semiconductor device innovation. His extensive patent portfolio of 17 patents speaks volumes about his dedication and commitment to pushing the boundaries of technological advancement. Having worked with Momentive Performance Materials GmbH and General Electric Corporation GmbH, Rowland has honed his skills alongside industry leaders, contributing to their success. These companies, renowned for their focus on manufacturing and innovation, provided Rowland with a platform to showcase his talents and make transformative contributions to the semiconductor industry.

Collaborations:

Rowland's work has not been carried out in isolation, and his collaborations with accomplished professionals have been instrumental in achieving groundbreaking results. Working alongside notable colleagues such as Mark Philip D'Evelyn and Stephen Daley Arthur, Rowland has harnessed the power of teamwork to accomplish remarkable technological feats. These collaborations have strengthened his ability to refine his inventions and drive innovation in the field of semiconductor devices.

Conclusion:

Larry Burton Rowland's prowess in the field of high voltage semiconductor devices is evident through his impressive patent portfolio and collaborations with renowned companies. His contributions have paved the way for advancements in Metal-oxide-semiconductor field-effect transistor (MOSFET) devices, including novel geometric arrangements and manufacturing methodologies. Rowland's achievements highlight his dedication to innovation and his invaluable role in shaping the semiconductor landscape. As he continues to push the boundaries of technological possibilities, we anticipate further groundbreaking contributions from him in the future.