The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Aug. 23, 2006
Kevin Sean Matocha, Rexford, NY (US);
Jody Alan Fronheiser, Selkirk, NY (US);
Larry Burton Rowland, Scotia, NY (US);
Jesse Berkley Tucker, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Zachary Matthew Stum, Niskayuna, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Jody Alan Fronheiser, Selkirk, NY (US);
Larry Burton Rowland, Scotia, NY (US);
Jesse Berkley Tucker, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Zachary Matthew Stum, Niskayuna, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.