The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Dec. 12, 2005
Mark Philip D'evelyn, Niskayuna, NY (US);
Thomas Richard Anthony, Schenectady, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Lionel Monty Levinson, Niskayuna, NY (US);
John William Lucek, Powell, OH (US);
Larry Burton Rowland, Scotia, NY (US);
Suresh Shankarappa Vagarali, Columbus, OH (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Thomas Richard Anthony, Schenectady, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Lionel Monty Levinson, Niskayuna, NY (US);
John William Lucek, Powell, OH (US);
Larry Burton Rowland, Scotia, NY (US);
Suresh Shankarappa Vagarali, Columbus, OH (US);
Momentive Performance Materials Inc., Albany, NY (US);
Abstract
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.