The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Oct. 26, 2006
Mark Philip D'evelyn, Niskayuna, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Steven Francis Leboeuf, Raleigh, NC (US);
Larry Burton Rowland, Scotia, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Peter Micah Sandvik, Clifton Park, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Steven Francis LeBoeuf, Raleigh, NC (US);
Larry Burton Rowland, Scotia, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Peter Micah Sandvik, Clifton Park, NY (US);
Momentive Performance Materials Inc., Albany, NY (US);
Abstract
There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 10cm, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.