The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Aug. 31, 2004
An-ping Zhang, Niskayuna, NY (US);
Larry B. Rowland, Scotia, NY (US);
James W. Kretchmer, Ballston Spa, NY (US);
Jesse Tucker, Niskayuna, NY (US);
Edmund B. Kaminsky, Rexford, NY (US);
An-Ping Zhang, Niskayuna, NY (US);
Larry B. Rowland, Scotia, NY (US);
James W. Kretchmer, Ballston Spa, NY (US);
Jesse Tucker, Niskayuna, NY (US);
Edmund B. Kaminsky, Rexford, NY (US);
Lockheed Martin Corporation, Bethesda, MD (US);
Abstract
A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.