Edmund B Kaminsky

Title: The Innovations of Edmund B. Kaminsky

Introduction

Edmund B. Kaminsky is a notable inventor based in Rexford, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of metal semiconductor field-effect transistors (MESFETs). With a total of 2 patents, his work has advanced the understanding and application of silicon carbide materials in electronics.

Latest Patents

Kaminsky's latest patents include a method of fabricating a MESFET with a sloped MESA structure. This innovation involves a silicon carbide metal semiconductor field-effect transistor that features a bi-layer silicon carbide buffer. This buffer improves electron confinement in the channel region and includes a layer that suppresses surface effects caused by dangling bonds and interface states. Additionally, the sloped MESA fabrication method utilizes a dielectric etch mask that protects the MESA top surface during processing, enabling the formation of sloped MESA sidewalls. Another significant patent is the SiC metal semiconductor field-effect transistor, which shares similar features aimed at enhancing performance and reliability.

Career Highlights

Edmund B. Kaminsky is currently employed at Lockheed Martin Corporation, where he continues to innovate and contribute to advanced technologies. His expertise in semiconductor fabrication has positioned him as a key player in the development of cutting-edge electronic components.

Collaborations

Throughout his career, Kaminsky has collaborated with esteemed colleagues such as An-Ping Zhang and Larry Burton Rowland. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Edmund B. Kaminsky's contributions to semiconductor technology through his patents and work at Lockheed Martin Corporation highlight his role as a significant inventor in the field. His innovations continue to impact the development of advanced electronic devices.