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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8994118 B1

PDFFull Text
Date of Patent:
Mar. 31, 2015

Filed:

May. 01, 2014

Semiconductor devices comprising getter layers and methods of making and using the same

Applicant:

Monolith Semiconductor, Inc., Ithaca, NY (US);

Inventors:

Kevin Matocha, El Dorado, AR (US);

Kiran Chatty, Oviedo, FL (US);

Larry Rowland, Scotia, NY (US);

Kalidas Chatty, Mountville, PA (US);

Assignee:

Monolith Semiconductor, Inc., Round Rock, TX (US);

Attorneys:

Morris, Manning & Martin, LLP

Christopher W. Raimund

Primary Examiner:

George Fourson, Iii

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 23/26 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/7802 (2013.01); H01L 23/26 (2013.01); H01L 23/3192 (2013.01); H01L 24/05 (2013.01); H01L 2224/051 (2013.01); H01L 2224/0519 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/0517 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05567 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13091 (2013.01);
Abstract

Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.

Find Patent Forward Citations

Matocha, Kevin. (2015). Semiconductor devices comprising getter layers and methods of making and using the same (U.S. Patent No. 8994118). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8994118

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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