Kanagawa, Japan

Kota Funayama

This inventor holds 21 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Manufacturing. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Hitachi, Ltd.. Active years: 2000-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kota Funayama. Retrieved from https://idiyas.com/inventor/kota-funayama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 76.2

Average Co-Inventor Count = 4.1

ph-index = 5

Forward Citations = 288(Granted Patents)


Location History:

  • Oume, JP (2000 - 2002)
  • Hitahinaka, JP (2006)
  • Hitachinaka, JP (2003 - 2010)
  • Tokyo, JP (2013)
  • Kanagawa, JP (2012 - 2017)

Company Filing History:


Years Active: 2000-2017

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Nonvolatile Memory
Field Effect Transistors
Vertical-Channel Transistors
Manufacturing Method
Memory Device
Semiconductor Technology
21 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Kota Funayama - Pioneering Inventor in Semiconductor Technology

Introduction:

Kota Funayama, a distinguished inventor in the realm of semiconductor technology, hails from Kanagawa, Japan. With an impressive portfolio boasting 21 patents, Funayama has made significant contributions to the field with his cutting-edge innovations.

Latest Patents:

Funayama's recent patents showcase his expertise in enhancing the reliability and performance of semiconductor devices. One of his notable inventions includes a method for manufacturing semiconductor devices that involve the formation of control gate electrodes using two polysilicon film layers. This approach results in improved reliability by preventing an increase in the size of grains in gate electrodes, particularly in nonvolatile memory and MOSFETs on the same substrate.

Another groundbreaking patent by Funayama focuses on a semiconductor device and its manufacturing method, particularly in the power feeding region of a memory cell. By embedding a plug in a contact hole and ensuring electrical connection to the memory gate electrode, this innovation demonstrates his prowess in optimizing the functionality of semiconductor devices.

Career Highlights:

Throughout his career, Funayama has honed his skills and expertise while contributing significantly to renowned companies such as Renesas Electronics Corporation and Renesas Technology Corp. His innovative spirit and dedication to pushing the boundaries of semiconductor technology have solidified his reputation as a trailblazer in the industry.

Collaborations:

Funayama has had the privilege of collaborating with esteemed colleagues in his journey of innovation. Notable coworkers such as Hiraku Chakihara and Yasushi Ishii have played pivotal roles in synergizing their talents and expertise to bring forth groundbreaking inventions in semiconductor technology.

Conclusion:

Kota Funayama stands as a visionary inventor who has left an indelible mark on the semiconductor industry through his trailblazing inventions and unwavering dedication to excellence. His pioneering spirit continues to inspire future generations of innovators, shaping the landscape of semiconductor technology for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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