The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jun. 19, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Koichi Toba, Kanagawa, JP;
Yasushi Ishii, Kanagawa, JP;
Hiraku Chakihara, Kanagawa, JP;
Kota Funayama, Kanagawa, JP;
Yoshiyuki Kawashima, Kanagawa, JP;
Takashi Hashimoto, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.