The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Dec. 10, 2004
Shuji Matsuo, Hitachinaka, JP;
Katsuhiro Uchimura, Hitachinaka, JP;
Yasuko Yoshida, Hitachinaka, JP;
Kota Funayama, Hitachinaka, JP;
Yutaka Takeshima, Yamaguchi, JP;
Shuji Matsuo, Hitachinaka, JP;
Katsuhiro Uchimura, Hitachinaka, JP;
Yasuko Yoshida, Hitachinaka, JP;
Kota Funayama, Hitachinaka, JP;
Yutaka Takeshima, Yamaguchi, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSilayer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.