logo

For the Inventor, By the Inventor

Tokyo, Japan

Kiyokazu Nagahara

This inventor holds 51 USPTO granted patents and 1 published patent application, primarily in Magnetic Memory Technology (CPC class G11B). Top assignees: Nec Corporation, Sony Corporation, Renesas Electronics Corporation. Active years: 1999-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kiyokazu Nagahara. Retrieved from https://idiyas.com/inventor/kiyokazu-nagahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 51 

% Patents Active = 84.3

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 334(Granted Patents)

Forward Citations (Not Self Cited) = 314(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa, JP (2003 - 2014)
  • Tokyo, JP (1999 - 2015)

Company Filing History:

goldMedal44 out of 36,735 
 
Nec Corporation
 patents
silverMedal5 out of 58,148 
 
Sony Corporation
 patents
bronzeMedal2 out of 7,659 
 
Renesas Electronics Corporation
 patents

Years Active: 1999-2015

Loading Chart...
Areas of Expertise:
Magnetic Memory
MRAM
Magnetoresistance
Non-Volatile Logic
Data Recording Layer
Initialization Method
Magnetic Domain Wall
Semiconductor Device
Manufacturing Method
Magnetic Storage System
Magnetoresistive Sensor
Power Supply
51 patents (USPTO):Explore Patents
1. 8994130 - Magnetic memory element and magnetic memory (2015-03-31),
2. 8884388 - Magnetic memory element, magnetic memory and manufacturing method of magnetic memory (2014-11-11),
3. 8830735 - Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film (2014-09-09),
4. 8791534 - Magnetic memory device and magnetic memory (2014-07-29),
5. 8787076 - Magnetic memory and method of manufacturing the same (2014-07-22),
6. 8687414 - Magnetic memory element and magnetic random access memory (2014-04-01),
7. 8625327 - Magnetic random access memory and initializing method for the same (2014-01-07),
8. 8592930 - Magnetic memory element, magnetic memory and initializing method (2013-11-26),
9. 8565011 - Method of initializing magnetic memory element (2013-10-22),
10. 8559214 - Magnetic memory device and magnetic random access memory (2013-10-15),
11. 8537604 - Magnetoresistance element, MRAM, and initialization method for magnetoresistance element (2013-09-17),
12. 8514616 - Magnetic memory element and magnetic memory (2013-08-20),
13. 8503222 - Non-volatile logic circuit (2013-08-06),
14. 8481339 - Magnetic memory and manufacturing method thereof (2013-07-09),
15. 8379429 - Domain wall motion element and magnetic random access memory (2013-02-19),

Title: The Innovative Journey of Kiyokazu Nagahara

Introduction: Kiyokazu Nagahara, a pioneering inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Kiyokazu Nagahara's recent patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable health monitoring devices, and sustainable energy solutions.

Career Highlights: With a career spanning over two decades, Nagahara has held key positions in leading tech companies, driving research and development in areas such as robotics, IoT, and renewable energy.

Collaborations: Throughout his career, Kiyokazu Nagahara has collaborated with top research institutions, universities, and multinational corporations to bring his inventions to life, fostering a culture of innovation and excellence.

Conclusion: Kiyokazu Nagahara's relentless pursuit of innovation and his passion for creating technology that positively impacts society solidify his position as a visionary inventor in the global tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…