The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Jun. 16, 2011
Shunsuke Fukami, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Shunsuke Fukami, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.