The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Dec. 24, 2009
Applicants:
Kiyokazu Nagahara, Tokyo, JP;
Shunsuke Fukami, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Inventors:
Kiyokazu Nagahara, Tokyo, JP;
Shunsuke Fukami, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.