The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Oct. 21, 2010
Shunsuke Fukami, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Shunsuke Fukami, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.