The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jan. 28, 2010
Shunsuke Fukami, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Shunsuke Fukami, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.