The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8379429 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 19, 2013

Filed:

Jan. 13, 2009
Applicants:

Nobuyuki Ishiwata, Tokyo, JP;

Tetsuhiro Suzuki, Tokyo, JP;

Norikazu Ohshima, Tokyo, JP;

Kiyokazu Nagahara, Tokyo, JP;

Shunsuke Fukami, Tokyo, JP;

Inventors:

Nobuyuki Ishiwata, Tokyo, JP;

Tetsuhiro Suzuki, Tokyo, JP;

Norikazu Ohshima, Tokyo, JP;

Kiyokazu Nagahara, Tokyo, JP;

Shunsuke Fukami, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A domain wall motion element has a magnetic recording layerthat is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layerhas: a pair of end regions-and-whose magnetization directions are fixed; and a center regionsandwiched between the pair of end regions-and-, in which the domain wall. DW moves. A first trapping site TSby which the domain wall DW is trapped is formed at a boundary between the end region--and the center region. Furthermore, at least one second trapping site TSby which the domain wall DW is trapped is formed within the center region


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Ishiwata, Nobuyuki. (2013). Domain wall motion element and magnetic random access memory (U.S. Patent No. 8379429). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8379429

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