The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Dec. 24, 2009
Applicants:
Shunsuke Fukami, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Inventors:
Shunsuke Fukami, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.