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For the Inventor, By the Inventor

Portland, OR, United States of America

Kevin X Zhang

This inventor holds 54 USPTO granted patents and 1 published patent application and 3 EPO patents, primarily in Memory Design (CPC class G11C). Top assignees: Intel Corporation, Hewlett-Packard Company, Hewlett-Packard Development Company, L.p.. Active years: 1998-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kevin X Zhang. Retrieved from https://idiyas.com/inventor/kevin-x-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 54 

% Patents Active = 66.7

 

Average Co-Inventor Count = 1.9

ph-index = 14

Forward Citations = 509(Granted Patents)

Forward Citations (Not Self Cited) = 490(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Fort Collins, CO (US) (1998)
  • Portland, CA (US) (2010)
  • Portland, OR (US) (1999 - 2015)

Company Filing History:

goldMedal49 out of 56,290 
 
Intel Corporation
 patents
silverMedal4 out of 9,639 
 
Hewlett-Packard Company
 patents
bronzeMedal1 out of 27,667 
 
Hewlett-Packard Development Company, L.p.
 patents

Years Active: 1998-2015

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Areas of Expertise:
DRAM
Antifuse Structures
SRAM
Memory Arrays
Pulse Sense Amplifier
Programmable Memory
Cache Access
Error Detection
Dynamic Voltage Scaling
Low Power Operation
Biasing Technique
54 patents (USPTO):Explore Patents
1. 9123724 - Methods of forming secured metal gate antifuse structures (2015-09-01),
2. 9013941 - DRAM with pulse sense amp (2015-04-21),
3. 8982659 - Bitline floating during non-access mode for memory arrays (2015-03-17),
4. 8618613 - Methods of forming secured metal gate antifuse structures (2013-12-31),
5. 8519462 - 6F2 DRAM cell (2013-08-27),
6. 8451670 - Adaptive and dynamic stability enhancement for memories (2013-05-28),
7. 8411482 - Programmable read only memory (2013-04-02),
8. 8406073 - Hierarchical DRAM sensing (2013-03-26),
9. 8395923 - Antifuse programmable memory array (2013-03-12),
10. 8242831 - Tamper resistant fuse design (2012-08-14),
11. 7981756 - Common plate capacitor array connections, and processes of making same (2011-07-19),
12. 7924596 - Area efficient programmable read only memory (PROM) array (2011-04-12),
13. 7657767 - Cache leakage shut-off mechanism (2010-02-02),
14. 7602663 - Fuse cell array with redundancy features (2009-10-13),
15. 7417913 - Fuse cell having adjustable sensing margin (2008-08-26),

Title: Innovations and Contributions of Kevin X Zhang in Microelectronics

Introduction

Kevin X Zhang, based in Portland, OR, is a prominent inventor with an impressive portfolio of 54 patents in the microelectronics field. His innovations focus on advanced semiconductor technologies, paving the way for more efficient electronic devices.

Latest Patents

Among his latest patents, Zhang developed methods for forming secured metal gate antifuse structures. This invention involves creating a diode positioned between a metal fuse gate and a PMOS device, which facilitates effective coupling between the two components. Another notable patent addresses a pulsed sense amplifier approach for resolving data on DRAM bitlines, introducing a circuit that enhances the functionality and performance of memory chips by controlling the transition states of sense amplifiers.

Career Highlights

Throughout his career, Kevin X Zhang has made significant strides while working for renowned companies such as Intel Corporation and Hewlett-Packard Company. His expertise in semiconductor design and architecture has been instrumental in the development of cutting-edge technologies.

Collaborations

Zhang's journey has also involved collaboration with esteemed professionals, including Zhanping Chen and Fatih Hamzaoglu. These partnerships have played a crucial role in driving innovation and developing solutions to complex engineering challenges in the field of microelectronics.

Conclusion

Kevin X Zhang stands out as a leading inventor in the microelectronics sector, consistently contributing to advancements that enhance electronic device performance. His work continues to influence the future of semiconductor technology, solidifying his reputation as a pioneer in an ever-evolving industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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