The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jun. 27, 2011
Applicants:
Yih Wang, Portland, OR (US);
M. Clair Webb, Aloha, OR (US);
Nick Lindert, Portland, OR (US);
Swaminathan Sivakumar, Beaverton, OR (US);
Kevin X. Zhang, Portland, OR (US);
Dinesh Somasekhar, Portland, OR (US);
Inventors:
Yih Wang, Portland, OR (US);
M. Clair Webb, Aloha, OR (US);
Nick Lindert, Portland, OR (US);
Swaminathan Sivakumar, Beaverton, OR (US);
Kevin X. Zhang, Portland, OR (US);
Dinesh Somasekhar, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A 6FDRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.