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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Nick Lindert

USPTO Granted Patents = 42 

Average Co-Inventor Count = 3.2

ph-index = 13

Forward Citations = 764(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2004)
  • Beaverton, OR (US) (2004 - 2020)
  • Portland, OR (US) (2013 - 2023)

Company Filing History:

goldMedal42 out of 54,664 
 
Intel Corporation
 patents

Years Active: 2004-2025

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42 patents (USPTO):
1. 12426316 - Method of fabricating integrated circuits with fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material (2025-09-23),
2. 11688792 - Dual self-aligned gate endcap (SAGE) architectures (2023-06-27),
3. 11605632 - Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls (2023-03-14),
4. 11562999 - Cost effective precision resistor using blocked DEPOP method in self-aligned gate endcap (SAGE) architecture (2023-01-24),
5. 11538937 - Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material (2022-12-27),
6. 11217582 - Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls (2022-01-04),
7. 11205708 - Dual self-aligned gate endcap (SAGE) architectures (2021-12-21),
8. 10541143 - Self-aligned build-up of topographic features (2020-01-21),
9. 10109628 - Transistor device with gate control layer undercutting the gate dielectric (2018-10-23),
10. 9972541 - Technique for filling high aspect ratio, narrow structures with multiple metal layers and associated configurations (2018-05-15),
11. 9691839 - Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers (2017-06-27),
12. 9577030 - Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer (2017-02-21),
13. 9565766 - Formation of DRAM capacitor among metal interconnect (2017-02-07),
14. 9224794 - Embedded memory device having MIM capacitor formed in excavated structure (2015-12-29),
15. 9076758 - Rectangular capacitors for dynamic random access (DRAM) and dual-pass lithography methods to form the same (2015-07-07),

Title: Innovations of Nick Lindert: A Renowned Inventor in Semiconductor Engineering

Introduction: Nick Lindert, based in Beaverton, Oregon, has made significant contributions to the field of semiconductor engineering. With a remarkable portfolio of 41 patents, he stands out as an exemplary inventor known for his innovative solutions and designs. His work is crucial to advancing integrated circuit structures, which play a vital role in modern electronics.

Latest Patents: Among his latest patents, two notable innovations are the "Dual self-aligned gate endcap (SAGE) architectures" and "Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls." The dual self-aligned gate endcap architecture describes methods of fabricating integrated circuit structures featuring semiconductor fins with strategic cuts and isolation structures that enhance device performance. Similarly, the unidirectional self-aligned gate endcap architecture also focuses on semiconductor fins with cut specifications and uniform gate endcap isolation structures. These patents reflect Lindert's deep understanding of semiconductor design and fabrication processes.

Career Highlights: Nick Lindert currently works with Intel Corporation, a leading technology company renowned for its advancements in semiconductor technology. His extensive experience and innovative thinking have propelled him to the forefront of his field, allowing him to make notable contributions through his patents and research.

Collaborations: Throughout his career, Lindert has collaborated with various professionals, including notable coworkers like Justin K. Brask and Walid M. Hafez. These collaborations have facilitated the sharing of ideas and expertise, further driving innovation in the development of advanced semiconductor technologies.

Conclusion: Nick Lindert's legacy as an inventor is marked by his dedication to innovation and his substantial impact on the semiconductor industry. With 41 patents to his name and a commitment to advancing technology, he exemplifies the spirit of invention that fuels progress within the field. His recent developments in self-aligned gate endcap architectures continue to shape the future of integrated circuits, solidifying his status as a key figure in the realm of semiconductor engineering.

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