The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Dec. 22, 2008
Nick Lindert, Beaverton, OR (US);
Brian Doyle, Portland, OR (US);
Dinesh Somasekhar, Portland, OR (US);
Christopher J. Jezewski, Hillsboro, OR (US);
Swaminathan Sivakumar, Beaverton, OR (US);
Kevin Zhang, Portland, OR (US);
Stephen Wu, Portland, OR (US);
Nick Lindert, Beaverton, OR (US);
Brian Doyle, Portland, OR (US);
Dinesh Somasekhar, Portland, OR (US);
Christopher J. Jezewski, Hillsboro, OR (US);
Swaminathan Sivakumar, Beaverton, OR (US);
Kevin Zhang, Portland, OR (US);
Stephen Wu, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A process of forming a semiconductive capacitor device for a memory circuit includes forming a first capacitor cell recess and a second capacitor cell recess that are spaced apart by a capacitor cell boundary of a first height. The process includes lowering the first height of the capacitor cell boundary to a second height. A common plate capacitor bridges between the first recess and the second recess over the boundary above the second height and below the first height.