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Keon Soo Shim

USPTO Granted Patents = 21 (Patent Applications = 3)

Average Co-Inventor Count = 1.7

ph-index = 6

Forward Citations = 93(Granted Patents)

Location History:

Kyungki-Do, KR (2002)
Ichon-Shi, KR (2004)
Kyeongki-Do, KR (2007 - 2011)
Yongin-si, KR (2009 - 2014)
Icheon-si Gyeonggi-do, KR (2016)
Gyeonggi-do, KR (2012 - 2017)
Icheon-si, KR (2016 - 2024)

Company Filing History:

Hynix Semiconductor Inc.

patents

Years Active: 2002-2024

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21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11880582 - Memory device having improved program and erase operations and operating method of the memory device (2024-01-23),

2. 10950306 - Memory device having improved program and erase operations and operating method of the memory device (2021-03-16),

3. 9853041 - Semiconductor device and methods of manufacturing and operating the same (2017-12-26),

4. 9711517 - Memory device having a pipe transistor and sub-pipe gate materials with different oxidation rates (2017-07-18),

5. 9627078 - Semiconductor device and operating method thereof (2017-04-18),

6. 9620224 - Semiconductor device and operating method thereof (2017-04-11),

7. 9424935 - Semiconductor device (2016-08-23),

8. 9396799 - Semiconductor memory device improving threshold voltage of unselected memory block and method of operating the same (2016-07-19),

9. 9384846 - Semiconductor memory device, memory system including the same, and operating method thereof (2016-07-05),

10. 9384841 - Semiconductor device, semiconductor system having the same and operating method thereof (2016-07-05),

11. 9053796 - Semiconductor device and methods of manufacturing and operating the same (2015-06-09),

12. 8929149 - Semiconductor memory device and method of operating the same (2015-01-06),

13. 8625359 - Programming method of flash memory device (2014-01-07),

14. 8279675 - Nonvolatile memory device and method of programming the same (2012-10-02),

15. 7889557 - NAND flash memory device with increased spacing between selection transistors and adjacent memory cells (2011-02-15),

Title: Keon Soo Shim: Innovating Memory Devices

Introduction: Keon Soo Shim is a renowned inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of memory devices and holds a total of 21 patents. His work focuses on enhancing the performance and efficiency of memory operations, which have far-reaching implications in the tech industry.

Latest Patents: Among his latest inventions, Keon Soo Shim has developed a "Memory device having improved program and erase operations and operating method of the memory device". This innovative method involves a memory block equipped with a source select transistor connected between a source line and a bit line, integrating multiple memory cells and a drain select transistor. The operating method successfully manages to control the source select line and word lines in a floating state while applying an erase voltage to the source and bit lines. Another related patent discusses the structure of a memory device with a memory cell array consisting of several blocks that share a source line, emphasizing control logic that optimizes the program and erase operations through clever management of source select transistors.

Career Highlights: Throughout his career, Keon Soo Shim has worked for reputable companies such as SK Hynix Inc. and Hynix Semiconductor Inc. His experience in these prominent firms has furnished him with the expertise required to push boundaries and innovate in memory technology.

Collaborations: In the course of his career, Keon Soo Shim has collaborated with talented individuals, including Yoo Nam Jeon and Bong Yeol Park. These partnerships have likely fostered an environment of creativity and technological advancement, leading to the development of groundbreaking memory solutions.

Conclusion: Keon Soo Shim's contributions to the realm of memory devices underscore his prominence as an inventor in the tech industry. With 21 patents to his name and ongoing innovations, he continues to shape the future of memory technology, marking him as a significant figure in the landscape of modern inventions.

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