The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Mar. 17, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Yoo Nam Jeon, Gyeonggi-do, KR;

Keon Soo Shim, Gyeonggi-do, KR;

Hae Soon Oh, Chungcheongbuk-do, KR;

Bong Yeol Park, Chungcheongbuk-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/28 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 16/3427 (2013.01);
Abstract

A semiconductor device includes a memory array including memory blocks, and an operation circuit suitable for performing a program loop and an erase loop on memory cells and selection transistors included in a selected memory block, wherein the operation circuit performs the program loop on the selection transistors so that a difference occurs between threshold voltages of the selection transistors and a target threshold voltage based on a difference between a cell current value of the selected memory block and a reference cell current value.


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