The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Apr. 30, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Keon Soo Shim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); G11C 16/04 (2013.01); G11C 16/12 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device includes a memory cell array including a vertical channel layer, two or more selection transistors, and a plurality of memory cells formed along the vertical channel; a peripheral circuit suitable for programming the two or more selection transistors and the memory cells; and a control circuit suitable for controlling the peripheral circuit to decrease a pass voltage applied to one word line adjacent to two or more selection lines coupled to the respective selection transistors, during a program operation in which the peripheral circuit applies a program voltage to the two or more selection lines and applies the pass voltage to a plurality of word lines connected to the memory cells.


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