The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Feb. 11, 2021
Memory device having improved program and erase operations and operating method of the memory device
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Byung In Lee, Hwaseong-si, KR;
Hee Joung Park, Seoul, KR;
Keon Soo Shim, Icheon-si, KR;
Sang Heon Lee, Chungcheongbuk-do, KR;
Jae Il Tak, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/0604 (2013.01); G06F 3/0652 (2013.01); G06F 3/0679 (2013.01);
Abstract
A method for operating a memory device includes providing a memory block including at least one source select transistor coupled between a source line and a bit line, a plurality of memory cells, and a drain select transistor, controlling a source select line coupled to the at least one source select transistor and a plurality of word lines coupled to the plurality of memory cells to be in a floating state, and applying an erase voltage to the source line and the bit line.