The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Nov. 17, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Yeon Seob Im, Icheon-si, KR;

Eun Mee Kwon, Icheon-si, KR;

Nam Kuk Kim, Icheon-si, KR;

Keon Soo Shim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor memory device includes a first channel structure which is adjacent to an insulating structure and penetrates a plurality of conductive layers, a second channel structure which is spaced apart from the insulating structure and penetrates the plurality of conductive layers, a first impurity region included in an end portion of the first channel structure, and a second impurity region included in an end portion of the second channel structure. A doping concentration of an impurity in the first impurity region is different from a doping concentration of an impurity in the second impurity region.


Find Patent Forward Citations

Im, Yeon. (2026). Semiconductor memory device (U.S. Patent No. 12538487). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538487

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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