HSINCHU COUNTY, Taiwan

Kam-tou Sio

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2024-2025

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8 patents (USPTO):

**Title: Kam-tou Sio: Innovator in Semiconductor Technology**

Introduction

Kam-tou Sio is a prominent inventor based in Hsinchu County, Taiwan, recognized for his groundbreaking contributions to the semiconductor industry. With a remarkable portfolio of seven patents, he has been instrumental in advancing technology in this critical field.

Latest Patents

Among his latest innovations, Kam-tou Sio has developed a **semiconductor device including a source/drain contact having height below gate stack**. This patent outlines a sophisticated semiconductor structure that features a first and a second gate structure, along with a local interconnect extending across non-active regions, thereby enhancing the efficiency of semiconductor devices.

Another notable patent by Sio focuses on an **integrated circuit structure and method for manufacturing the same**. This invention details a design that includes first and second transistors, both equipped with their respective gate electrodes. The design emphasizes a mirror-symmetrical arrangement of transistors and conductive vias, optimizing performance and reliability in integrated circuits.

Career Highlights

Kam-tou Sio currently works with Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor industry. His work has not only contributed to the company's reputation for innovation but also aided in the development of cutting-edge semiconductor technologies.

Collaborations

Throughout his career, Sio has collaborated with esteemed colleagues, including Jiann-Tyng Tzeng and Chih-Liang Chen. These collaborations have facilitated the exchange of ideas and furthered advancements in semiconductor research and development, showcasing the importance of teamwork in achieving innovative breakthroughs.

Conclusion

Kam-tou Sio stands out as a key figure in semiconductor innovation, with a focus on improving device structures and manufacturing methods. His contributions not only enhance the efficiency and capability of semiconductors but also lay a foundation for future advancements in the industry.

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