The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Apr. 18, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Kam-Tou Sio, Hsinchu County, TW;

Shang-Wei Fang, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Chew-Yuen Young, Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 23/498 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823821 (2013.01); H01L 23/49827 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

An integrated circuit device includes: a first fin structure disposed on a substrate in a first direction; a second fin structure disposed on the substrate and aligned in the first direction; a third fin structure disposed on the substrate and aligned in the first direction; and a first conductive line aligned in a second direction arranged to wrap a first portion, a second portion, and a third portion of the first fin structure, the second fin structure and the third fin structure, respectively. Each of the first fin structure, the second fin structure and the third fin structure has a same type dopant. A first distance between the first fin structure and the second fin structure is different from a second distance between the second fin structure and the third fin structure.


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