The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Nov. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kam-Tou Sio, Hsinchu County, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); G06F 30/392 (2020.01);
Abstract

A method includes placing, in a layout, a plurality of first cells each having a first NFET fin number. The first cells are swapped with a plurality of second cells each having a second NFET fin number less than the first NFET fin number. After swapping the first cells with the second cells, a timing critical path in the layout is identified. Some of the second cells in the identified timing critical path are swapped with a plurality of third cells each having a third NFET fin number greater than the second NFET fin number. After swapping some of the second cells in the identified timing critical path with the third cells, an integrated circuit is fabricated based on the layout.


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