The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Dec. 01, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Charles Chew-Yuen Young, Cupertino, CA (US);
Chih-Liang Chen, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Shun-Li Chen, Tainan, TW;
Kam-Tou Sio, Hsinchu County, TW;
Shih-Wei Peng, Hsinchu, TW;
Chun-Kuang Chen, Hsinchu County, TW;
Ru-Gun Liu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.